Influence of the impurity fluctuations on the electronic and transport processes in doping superlattices

摘要

In the paper, the influence of high doping on the energy spectrum and electron transport characteristics of n-i-p-i crystals is determined taking into account the Gaussian and exponential character of the fluctuated energy states. Influence of the impurity correlation on the D//spl mu/ ratio is examined in detail. Data of self-consistent calculations of the Schrodinger and Poisson's equations are presented for different temperatures of the crystal.