SEMICONDUCTOR DEVICE WITH AN IMPURITY DIFFUSION PREVENTING LAYER IN A POLY SILICON LAYER DOPED WITH IMPURITIES AND A DRAM DEVICE USING THE SAME, CAPABLE OF PREVENTING THE DIFFUSION OF IMPURITIES DOPED IN A POLY SILICON LAYER

摘要

PURPOSE: A semiconductor device with an impurity diffusion preventing layer in a poly silicon layer doped with impurities ad a DRAM device using the same are provided to improve a contact property by not forming void or seam in a pad poly silicon layer.;CONSTITUTION: A plurality of gate stacks are formed on a semiconductor substrate(100). An impurity region is formed on a semiconductor substrate between gate stacks. An insulation layer(104) includes a contact hole(102) which exposes the semiconductor substrate. The impurities are doped in a poly silicon layer(108) including an impurity diffusion preventing layer(106). The impurity diffusion preventing layer is formed on a boundary between the semiconductor substrate and the poly silicon layer or between the insulation layer and the poly silicon layer.;COPYRIGHT KIPO 2011