Influencia dos Estados de Impureza E de Conducao Sobre as Propriedades Eletronicas de Semicondutores Dopados (Influence of the Impurity and Conduction States on Electronic Properties of Doped Semiconductors)

摘要

Many models appropriated to the description of the electronic properties of doped semiconductors are investigated. A description of the Mott-Hubbard-Anderson model, the formalism of configurational averages of Matsubara-Toyosawa, and the description of the states associated with isolated impurities are presented. Many questions associated with the application of the effective mass approximation to systems with many impurities, some qualitative and formal aspects about the electron-electron interactions, as well as some results obtained through preliminary models are discussed. Different models that take into account the hybridization between impurity and conduction states are proposed and analyzed. A model based entirely upon the bloch functions of the host for the description of the eigenstates of the system are presented and analyzed. The specific heat and spin susceptibility predicted by all these models are compared with the corresponding experimental results.