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Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

机译：快速热退火对应变InGaAs / GaAs单量子阱激光二极管中电子发射和DX中心的影响

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《》|2000年|P.341-344|共4页
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Liwu Lu; Yanhua Zhang;
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中图分类无线电电子学、电信技术;
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专利

1. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes [J] . Liwu Lu, Yanhua Zhang, Zuntu Xu Journal of Crystal Growth . 2000,第1期

机译：快速热退火对应变InGaAs / GaAs单量子阱激光二极管中电子发射和DX中心的影响
2. Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing [J] . Ko J., Chen C.-H. Electronics Letters . 1996,第22期

机译：低阈值MBE生长的AlInGaAs / AlGaAs应变多量子阱激光器的快速热退火
3. The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes [J] . Gareso P L, Buda M, Tan H H, Indian Journal of Pure & Applied Physics . 2017,第05期

机译：快速热退火对InGaAs / AlGaAs量子阱激光二极管器件性能的影响
4. Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes [C] . Liwu Lu, Yanhua Zhang, Zuntu Xu, International Semiconducting and Insulating Materials Conference . 2000

机译：快速热退火对应变IngaAs / GaAs单量子孔激光二极管中电子发射和DX中心的影响
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. Improved ground-state modulation characteristics in 1.3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing [O] . Hanxue Zhao, Soon Fatt Yoon, Chun Yong Ngo, 2011

机译：通过快速热退火改善1.3μmInAs / GaAs量子点激光器中的基态调制特性
7. Wavelength dependence of the spectral linewidth of a grating-tuned CW single-frequency external-cavity strained quantum well InGaAs/AlGaAs Grinsch diode laser [O] . Hsu Long 1994

机译：光栅调谐CW单频外腔应变量子阱InGaas / alGaas Grinsch二极管激光器光谱线宽的波长依赖性

Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes

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