Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV region

摘要

Responsivity spectra and electrical characteristics of GaN based Schottky type ultraviolet (UV) photodetectors with transparent electrode from the near UV region to the vacuum ultraviolet (VUV) region (3.4 to 25 eV) are described. In order to improve device performance in applying reverse bias, the annealed transparent Schottky electrode in N/sub 2/ ambient is used. The dark current of samples after annealing Schottky electrode is reduced by hundredth part of that of samples before annealing Schottky electrode. The responsivity spectra with reverse bias are improved by annealing Schottky electrode.