A quasi-mixed-mode MOSFET model for simulation and prediction of substrate resistance under ESD stress and layout variations

摘要

This paper presents a novel quasi-mixed-mode model for the computation of the varying substrate resistance during ESD stress. This model also predicts the change of substrate resistance with respect to layout variations. The model shows good agreement with experimental data, and has good convergence properties. This is the first time that a model has demonstrated accuracy in predicting the substrate resistance due to both ESD stress and layout changes.