Thin film growth conditions for CVD diamond under low pressure

摘要

Non-equilibrium stationary phase diagrams for diamond growth with nitrogen addition into the reaction system were calculated and coordinate well with published experimental results. Therefore they can direct the experimental research on the subject. The effects of nitrogen addition on the deposition of diamond films were discussed by using the phase diagrams. The nitrogen addition can accelerate the deposition rate of diamond films in two aspects: enhance the CH/sub 3/ concentration at the growth surface and accelerate the abstraction of H atoms covering the growth surface sites.