Development of p-type microcrystalline silicon-carbon alloy thin film at low power and its application in tunnel junctions solar cells

摘要

Wide band gap anti-highly conducting p-type microcrystalline silicon carbide (/spl mu/c-SiC:H) thin films have been prepared at low power (39 mW/cm/sup 2/) by a conventional RF-PECVD technique. The dark conductivity of the films varies from 8-0.11 S cm/sup -1/ whereas the E/sub 04/ value varies from 1.95-2.35 eV, for different carbon incorporations. These films have been applied in an incomplete double junction solar cell structure, viz. glass/TCO/p/i/sup +//p/sup +//Al to study the tunneling effect.