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Substrate temperature: A critical parameter for the growth of microcrystalline silicon-carbon alloy thin films at low power

机译:基板温度:低功率下微晶硅碳合金薄膜生长的关键参数

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摘要

P-type microcrystalline silicon-carbon alloy thin films have been prepared at low power by employing radio-frequency plasma-enhanced chemical vapor deposition (rfPECVD) technique; judicious choice of deposition parameters is necessary. Substrate temperature has been observed to be the most critical parameter, while high hydrogen dilution is necessary but not a sufficient condition for obtaining crystallinity in silicon-carbon alloy thin films. Best microcrystallinity at moderate power density (78 mW/cm~2) has been obtained at a fairly low substrate temperature (l80 deg. C). The highest conductivity of 5.7 Scm~-l of a boron-doped microcrystalline sample could be achieved. Incorporation of carbon in these films has been confirmed from x-ray photoelectron spectroscopic (XPS) studies. Carbon is, however, incorporated only in the amorphous phase while the crystallites are of silicon only as observed from Raman spectra.
机译:通过采用射频等离子体增强化学气相沉积(rfPECVD)技术以低功率制备了P型微晶硅碳合金薄膜;明智地选择沉积参数。已经观察到衬底温度是最关键的参数,而高氢稀释是必需的,但不是获得硅碳合金薄膜的结晶度的充分条件。在相当低的衬底温度(180℃)下获得了中等功率密度(78 mW / cm〜2)下的最佳微晶度。掺硼微晶样品的电导率最高可达到5.7 Scm-1。通过X射线光电子能谱(XPS)研究已证实在这些薄膜中掺入了碳。然而,从拉曼光谱观察,碳仅掺入非晶相而微晶仅是硅。

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