New evaluation method for reliability of poly-Si thin film transistors using pico-second time-resolved emission microscope

摘要

We have analyzed degradation of n-channel TFTs under dynamic stress using a pico-second time-resolved emission microscope. We have successfully detected emission in the pulse fall edge for the first time. We have also obtained a hot electron current during the pulse fall using a device simulation that took the transient effect into consideration. Based on the reasonable agreement between the experimental emission intensity and the theoretical current, we proposed a new degradation model.