Thin Films Properties of Sputtered Niobium Silicide on SiO2, Si3N4 and on N+ Poly-Si

摘要

The thin film properties of sputtered niobium silicide on SiO2, Si3N4 and n(+) doped poly-Si have been investigated. The structural and compositional properties were studied with X-ray diffraction, Rutherford backscattering spectrometry and secondary ion mass spectroscopy. Niobium silicide thin films are deposited on SiO2, Si3N4 and n(+)poly-Si have been characterized. Similar to the other refractory silicides, annealing at high temperatures resulted in structural recrystallization and a sharp decrease in resistivity. After annealing at 1000 C, a resistivity of approx. 70 microohms-cm was obtained. For a 2500A NbSi2/2500A N(+)poly-Si stack, a sheet resistance of 2.5 ohms/square after annealing at the same temperature.