Source/drain-tied poly-Si thin-film transistor with π-shaped active region for device reliability improvement

摘要

This article presents a nonclassical poly-Si thin-film transistor for device reliability improvement. With this structure, the discontinuous block oxide islands under the channel and the source/drain regions can help construct a natural source/drain tie to overcome the effects of floating-body and self-heating, respectively. In addition, both the junction leakage current and short-channel effects are significantly diminished in the proposed structure. For the most part, this is because the charge sharing from the source/drain junctions is blocked from entering the depletion region; hence, the controllability of the gate over the channel can be improved.