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Simplified Simulation Of Gaas Mesfets With Semi-insulating Substrates Compensated By Deep Levels

机译：具有深水平补偿的半绝缘衬底的Gaas Mesfet的简化仿真

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《》|2001年|P.41-42|共2页
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Horio; K.; Fuseya; Y.;
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中图分类无线电电子学、电信技术;
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专利

1. Simplified simulations of GaAs MESFET's with semi-insulating substrate compensated by deep levels [J] . Horio K., Fuseya Y. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems . 1991,第10期

机译：具有深水平补偿的半绝缘衬底的GaAs MESFET的简化仿真
2. Two-dimensional simulations of drain-current transients in GaAs MESFET's with semi-insulating substrates compensated by deep levels [J] . Horio K., Fuseya Y. IEEE Transactions on Electron Devices . 1994,第8期

机译：半绝缘衬底的GaAs MESFET的漏极电流瞬变的二维模拟，并通过深能级进行了补偿
3. Numerical simulation of GaAs MESFETs with a p-buffer layer on a semi-insulating substrate compensated by deep traps [J] . Horio K., Fuseya Y. IEEE Transactions on Microwave Theory and Techniques . 1989,第9期

机译：具有深陷阱补偿的半绝缘衬底上具有p缓冲层的GaAs MESFET的数值模拟
4. Simplified Simulation Of Gaas Mesfets With Semi-insulating Substrates Compensated By Deep Levels [C] . Horio K., Fuseya Y., Institute of Electric and Electronic Engineer Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits . 2001

机译：通过深度补偿的半绝缘基板的GaAs Mesfet简化模拟
5. Fabrication, testing and reliability modeling of copper/titanium-metallized GaAs MESFETs and HEMTs for low-noise applications. [D] . Feng, Ting. 1999

机译：用于低噪声应用的铜/钛金属化GaAs MESFET和HEMT的制造，测试和可靠性建模。
6. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates [O] . M Shafi, RH Mari, A Khatab, 2010

机译：在（100）和（311）B GaAs衬底上生长的GaAs / AlGaAs多量子阱的深层瞬态光谱
7. Active layer – semi-insulating substrate interface effect on GaAs MESFET components [O] . Belgat M., Merabtine N., Zaabat M., 2004

机译：有源层–半绝缘衬底界面对GaAs MESFET组件的影响
8. Modeling of Substrate and Implantation Effects on the Threshold Voltage of MESFET Structures Fabricated in Semi-Insulating GaAs [R] . Sigmon, T. W. 1986

机译：衬底和注入对半绝缘Gaas制备的mEsFET结构阈值电压的影响模拟

Simplified Simulation Of Gaas Mesfets With Semi-insulating Substrates Compensated By Deep Levels

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