Highly tensile strained silicon carbon phosphorus alloys epitaxially grown into recessed source drain areas of NMOS devices

摘要

Growth rates up to 82 nm/min (at 550/spl deg/C) led to films incorporating up to 3.6% substitutional carbon according to Vegard's law; (2.8% after (Kelires, 1998)) and an /spl alpha//epi growth rate ratio of 1. The films were fully strained with perpendicular lattice constants of down to 5.363 /spl Aring/ and displayed stress well above 2 GPa. Moreover, these films could be heavily doped with P and led to resistivities as low as 0.5 - 1.5 m/spl Omega/cm.