Low frequency noise (LFN) characteristics of SiGe channel SOI dynamic threshold MOSFETs (SiGe-SOI-DTMOS) for low-power applications

摘要

In this paper, we have realized both p- and n-SiGe-DTMOS on SOI substrate simultaneously using LOCOS isolation and selective epitaxial growth CMOS process, and have examined LFN properties of p- and n-SiGe-SOI-DTMOS for the first time.