A novel high current gain lateral PNP transistor on SOI for complementary bipolar technology

摘要

In order to improve driver performance of PNP transistor high current gain is required but PNP transistor exhibits low current gain due to poor hole mobility. In this paper a novel high current gain lateral PNP transistor on SOI for complementary bipolar technology is presented. The paper also presents the demonstration of a significant current gain enhancement in a PNP transistor using simple surface accumulation layer transistor that is compatible with standard BiCMOS technology.