Asymmetric design of semiconductor laser diodes: thin p-clad and low divergence InGaAs/AlGaAs/GaAs devices

摘要

The asymmetric design of a semiconductor laser structure presented in this paper is based on the extension of the near field in the vertical direction (growth direction) preferentially on the n-side of the structure. P-type layers show lower mobility and higher optical losses than n-type layers. Thus the series resistance of the device and the internal losses would benefit from this approach. The vertical spot size is 0.8 /spl mu/m, making the structures also suitable for high power operation. We give the refractive index profile and optical field distribution in the asymmetric structures.