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Delay-fault testing and defects in deep sub-micron ICs-does critical resistance really mean anything?

机译:延迟故障测试和深亚微米IC中的缺陷-临界电阻真的意味着什么吗?

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This paper reflects on some recent results that show the value of delay-fault tests on a deep sub-micron process. However, the results also suggest that untargetted test patterns perform almost as well as those targetted on a transition fault model, despite appearing to have a much lower fault coverage. This leads to an examination of the defect mechanisms in deep sub-micron ICs, in particular the relationship of crosstalk and power-rail coupling to resistive opens and resistive bridges. A number of new fault mechanisms are described. The paper shows the importance of initialization conditions for resistive opens and the importance of noise margins with resistive bridges. These noise margin considerations throw doubts on the idea used by other authors of the "critical resistance" of a bridge.
机译:本文反映了一些最新的结果,这些结果显示了在深亚微米工艺中进行延迟故障测试的价值。但是,结果也表明,尽管目标覆盖率似乎要低得多,但非目标测试模式的性能几乎与过渡故障模型上的目标模式相同。这导致了对深亚微米IC中缺陷机制的研究,尤其是串扰和电源轨耦合与电阻性开路和电阻性电桥之间的关系。描述了许多新的故障机制。本文显示了电阻性开路的初始化条件的重要性以及电阻性电桥的噪声容限的重要性。这些噪声余量的考虑使其他作者对桥梁“临界电阻”的想法产生了怀疑。

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