Two-dimensional simulations of the parasitic edge conduction in deep submicron fully depleted SOI NMOS devices

摘要

This paper presents a simulation analysis of the edge device for a deep sub-micron fully depleted SOI technology. The influences of the doping level, of the remaining LOCOS oxide and of the LOCOS shape on the lateral conduction are presented. Using the results of this analysis, a LOCOS process has been developed and a tilted implant has been used to overdope the silicon film located below the bird's beak.