TiN prepared by plasma source ion implantation of nitrogen into Ti as a diffusion barrier for Si/Cu metallization

摘要

Summary form only given. TiN films prepared by plasma source ion implantation (PSII) of nitrogen into sputtered Ti films as adhesion promoter and diffusion barriers for Si/Cu metallization in ultra large scale integrated circuits (ULSIs) were investigated. The nitrogen-PSII process utilized a dose of 1/spl times/10/sup 17/ ions/cm/sup 2/ and peak voltages of -10, -15 and -20 kV, respectively. The microstructures and phase identification of the nitrogen-PSII treated TiN films were performed by using scanning electron microscope (SEM), transmission electron microscope (TEM) and X-ray diffraction (XRD). The properties of such TiN films as diffusion barriers between Cu and Si were investigated by annealing Cu(2000A)/TiN/Si stack films in vacuum from 500/spl deg/C to 700/spl deg/C, and by analyzing with four-point probe sheet resistance measurements, Rutherford backscattering spectrometry (RES) and Auger electron spectroscopy (AES).