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Effect of tunneling current on the modeling of AlGaAs/GaAs and InP/InGaAs/InP HBTs

机译：隧穿电流对AlGaAs / GaAs和InP / InGaAs / InP HBT建模的影响

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HBTs of AlGaAs/GaAs and InP/InGaAs are characterized and modeled. The effect of the tunneling current through the spike at the emitter-base heterojunction is analysed and shown that it is possible to include it in the Ebers-Moll model. A comparison of the measured current of the HBTs with the current calculated by the modified Ebers-Moll model, which includes the thermionic emission, is presented.

机译：对AlGaAs / GaAs和InP / InGaAs的HBT进行了表征和建模。分析了在发射极-基极异质结处通过尖峰的隧穿电流的影响，并表明有可能将其包括在Ebers-Moll模型中。给出了HBT的测量电流与修正的Ebers-Moll模型计算的电流的比较，该模型包括热离子发射。

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《》|1995年|P.761-766|共6页
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Martins; E.; Swart; J.W.;
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中图分类无线电电子学、电信技术;
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3. Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP [J] . Onur Esame, Yasar Gurbuz, Ibrahim Tekin, Microelectronics journal . 2004,第11期

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4. Effect of tunneling current on the modeling of AlGaAs/GaAs and InP/InGaAs/InP HBTs [C] . Martins E., Swart J.W., Institute of Electric and Electronic Engineer SBMO/IEEE MTT-S international microwave and optoelectronics conference . 1995

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5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

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Effect of tunneling current on the modeling of AlGaAs/GaAs and InP/InGaAs/InP HBTs

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