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Comments on 'Microwave Noise Modeling for InP-InGaAs HBP-InGaAs HBTs'

机译:关于“ InP-InGaAs HBP-InGaAs HBT的微波噪声建模”的评论

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The above paper [1] proposes analytical expressions for the noise parameters of microwave HBTs. They are compared with experimental data and with different expressions given in [2] and [3]. A strong deviation (approximately 2 dB) between the minimum noise figure calculated from [2] and experimental data at a frequency of 2 GHz is reported for several bias conditions. This disagreement in the "low-frequency" range is very surprising, as the equations given in [1, eqs. (1)-(3)] related to the intrinsic shot noise sources and their correlation are the same as those given in [2]. Noise parameter derivation based on the model given in [2] is explained and the calculated values are compared to experimental data given in [1].
机译:上述文献[1]提出了微波HBT噪声参数的解析表达式。将它们与实验数据以及[2]和[3]中给出的不同表达式进行比较。对于某些偏置条件,据报道从[2]计算出的最小噪声系数与2 GHz频率下的实验数据之间存在很大偏差(大约2 dB)。在[低频]范围内的这种分歧是非常令人惊讶的,因为在[1,eqs。 (1)-(3)]与固有散粒噪声源有关,它们的相关性与[2]中给出的相同。解释了基于[2]中给出的模型的噪声参数推导,并将计算值与[1]中给出的实验数据进行了比较。

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