Behavior of faulty single BJT BiCMOS logic gates

摘要

The logic behavior of single BJT BiCMOS devices under transistor level shorts and opens is examined. In addition to delay faults, faults that cause the gate to exhibit sequential behavior were observed. Several faults can be detected only by monitoring the current. The faulty behaviour of bipolar (TTL) and CMOS logic families is compared with BiCMOS. Effects of bridging faults in BiCMOS devices has been examined for both hard short as well as bridging with a significant resistance.