In the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASE~(TM)), process satisfies the demanding requirements of the industry. Typically, highly anisotropic, high aspect ratios profiles with fine CD (crilical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10 #mu#m/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASE~(TM) process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.
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