32nm Node Highly Reliable Cu/Low-k Integration Technology with CuMn Alloy Seed

摘要

This paper introduces a highly reliable Cu interconnect technology at the 32 nm node with CuMn alloy seed. A CuMn alloy liner seed process combined with a non-gouging liner has been integrated into the minimum-pitch wiring level. Stress migration fails with CuMn seed at plate-below-via structures were shut down by a non-gouging liner process. Integration with gouging liner and non-gouging liner is compared, and results of interaction with CuMn seed are discussed in this paper.