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Mechanisms of field emission from cubic boron nitride coated molybdenum emitters

机译:立方氮化硼涂覆的钼发射极的场发射机理

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A combination of classical I-V characterizationand voltage-dependent field emission energy distribution (V-FEED) analysis was employed to investigate the mechanisms that dominate field emission from tip-shaped Mo emitters electrophoretically coated with nominally intrinsic, cubic boronnitride (c-BN) powders. I-V characterization of Mo emitters before and after coating showed that the c-BN coating enhanced the field emission current by 2 orders of magnitude. V-FEED analysis revealed a voltage drop proportional to the applied voltage across the c-BN coating due to field penetration. This voltage dropwas typically in the order of several Volts for applied voltages of several 100 Volts, and a cathode-to-anode distance of 500 #mu#m. Extrapolation of V-FEED data to flat band condition identified the conduction band minimum of c-BN as the origin of field emitted electrons. At larger field emission currents, an additional voltage drop was observed and wa sfound to be proportional to the emission current. This observation was interpreted in terms of an ohmic resistance at the Mo/c-BN interface and was estimated to be in the order of 10 M#OMEGA#.
机译:结合经典的I-V表征和与电压相关的场发射能量分布(V-FEED)分析,以研究主导由电泳涂有名义上固有的立方氮化硼(c-BN)粉末的尖端形Mo发射器的场发射的机理。 Mo发射器在涂覆前后的I-V表征表明,c-BN涂层将场发射电流提高了2个数量级。 V-FEED分析显示,由于电场穿透,电压降与c-BN涂层上施加的电压成比例。对于几百伏特的施加电压,该电压降通常为几伏特的量级,并且阴极到阳极的距离为500#μm。将V-FEED数据外推到平坦带条件下,将c-BN的导带最小值确定为场发射电子的起源。在更大的场发射电流下,观察到一个额外的电压降,发现它与发射电流成正比。该观察结果是根据Mo / c-BN界面的欧姆电阻来解释的,估计约为10 M#OMEGA#。

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