Ring-type ESD damage caused by electrostatic chuck of ion implanter

摘要

Abstract: Electrostatic discharge (ESD) due to electrostatic chuck (ESC) during ion implantation was observed in our fab. This defect could burn out the inter-layer dielectric and jeopardize the circuit performance. the yield impact on 0.35 $mu@m product could be 40 percent. The defect distributed around the wafer edge and has a ring-type map. This defect occurred right after ESD implantation. The fringe field of the electrostatic chuck is the key reason why ring-type electrostatic discharge damage happened right after ion implantation. Our experimental result also showed that the junction characterization and surface conductivity will influence the probability of ESD damage caused by electrostatic chuck of ion implanter. !4