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NEW ELECTROMIGRATION FAILURE MODE IN FLIP CHIP SOLDER JOINTS

机译:倒装芯片焊点中的新电沉积故障模式

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摘要

A new electromigration failure mechanism in flip chiprnsolder joints is reported. The solder joints failed through arnvery rapid, localized dissolution of the Cu on the cathodernside. The regions of the dissolved Cu include not only thernCu under bump metallurgy but also the internal Curnconducting trace on the chip. From the location andrngeometry of the dissolved Cu, it can be concluded thatrncurrent crowding played an important role for the rapidrndissolution. The dissolved Cu atoms were then driven byrnelectrons to the anode side, and a large amount of Cu6Sn5rnwas formed there. To avoid this type of failure, anotherrnmetal more resistant to dissolution should be used in placernof or over Cu. Moreover, the geometry of the under bumprnmetallurgy and conducting trace might have to berncarefully designed to achieve a more uniform currentrndistribution to reduce the effect of current crowding.
机译:报道了一种新型的倒焊焊缝电迁移失效机制。由于在阴极侧上铜的快速,局部溶解,焊点失效。溶解的Cu的区域不仅包括凸块冶金中的Cu,还包括芯片上的内部Curn导电迹线。从溶解铜的位置和几何形状可以得出结论,电流拥挤对快速溶解起着重要作用。然后,溶解的Cu原子被电子驱动到阳极侧,并在那里形成大量的Cu6Sn5rn。为了避免这种类型的故障,应在胎盘中或在铜上使用更耐溶解的另一种金属。而且,可能必须谨慎地设计峰下冶金学和导电迹线的几何形状,以实现更均匀的电流分布,从而减小电流拥挤的影响。

著录项

  • 来源
  • 会议地点 Chicago IL(US)
  • 作者单位

    Department of Chemical Materials Engineering National Central University Chungli City, Taiwan;

    Department of Chemical Materials Engineering National Central University Chungli City, Taiwan;

    Department of Chemical Materials Engineering National Central University Chungli City, Taiwan;

    Department of Chemical Materials Engineering National Central University Chungli City, Taiwan kaocr@hotmail.com;

    Department of Materials Science and Engineering, UCLA Los Angeles, California 90095-1595;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 半导体器件制造工艺及设备;
  • 关键词

    electromigration; flip chip; PbSn solder; dissolution;

    机译:电迁移;倒装芯片; PbSn焊料;溶解;

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