ANALYSIS OF CVD PRECURSOR COMPOUNDS FOR TRACE METAL IMPURITIES BY ICPMS

摘要

As device dimensions shrink, researchers are increasingly pressed to find new materials for use as low-k and high-k precursors. In addition, proper analysis methods must be developed by analytical laboratories to assure final customers that the materials are sufficiently pure for fab processes. Many of the new materials coming into use present new challenges for the analytical laboratory, particularly in the analysis of trace metal impurities at part-per-billion (ppb) concentrations. The laboratory must exercise great care in method development and validation if reliable data is to be generated. The end user of the data should be aware of the potential analytical issues, and use caution in the interpretation of laboratory data. This paper discusses the challenges to the analytical laboratory presented by CVD precursor compounds containing hafnium, and describes some of the measures that must be taken to assure accurate and reliable trace metal concentrations are obtained. Comments on data interpretation by the end user are also offered.