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Some Issues in Quantitative X-Ray Photoelectron Spectroscopy and Auger-Electron Spectroscopy

机译:定量X射线光电子能谱和俄歇电子能谱中的一些问题

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We give an overview of two issues that are important in quantitative X-ray photoelectron Spectroscopy (XPS) and Auger-electron Spectroscopy (AES). First, we review the use of XPS standard test data (STD) that consist mainly of synthesized doublets. The STD were designed to test the reliability of peak energies and peak intensities obtained from fits to measured spectra containing overlapping components (i.e., that are often associated with different chemical states). The biases and random errors in peak positions can each be 0.1 eV or more when the doublet peak separation is less than 0.5 eV. In such cases, the median biases in relative peak intensities for the doublet components could be up to a factor of four, while the random errors could be up to factor of two. Second, we discuss the effects of elastic-electron scattering in measurements of overlayer-film thickness by AES or XPS. In such measurements, the effective attenuation length (EAL) should be used instead of the inelastic mean free path (IMFP). As an example, we present calculations of practical EALs for thin films of silicon dioxide on silicon for common XPS measurement conditions. For Mg and Al Kα x rays and photoelectron emission angles less than about 60°with respect to the surface normal, the average practical EALs are between 6.5 % and 9.4 % less than the corresponding IMFPs; the actual difference depends on the x-ray source, the SiO_2 thickness, and the XPS configuration. For larger emission angles, the practical EALs can vary appreciably with SiO_2 thickness and emission angle; in these circumstances, practical EALs should be determined for the specific measurement conditions. If XPS is performed with smaller x-ray energies (i.e., with synchrotron radiation), the practical EALs can be up to about 30 % less than the IMFP and can differ for emission angles of 0°and 55°as found in recent experiments.
机译:我们概述了在定量X射线光电子能谱(XPS)和俄歇电子能谱(AES)中很重要的两个问题。首先,我们回顾了XPS标准测试数据(STD)的使用,该数据主要由合成的doublet组成。 STD旨在测试峰能量和峰强度的可靠性,这些峰能量和峰强度是通过对包含重叠成分(即通常与不同化学状态相关的成分)的测量光谱进行拟合获得的。当双峰峰间距小于0.5 eV时,峰位置的偏差和随机误差可分别为0.1 eV或更高。在这种情况下,双峰组分相对峰强度的中值偏差可能高达四倍,而随机误差可能高达二倍。其次,我们讨论了弹性电子散射对通过AES或XPS测量覆盖膜厚度的影响。在此类测量中,应使用有效衰减长度(EAL)代替非弹性平均自由程(IMFP)。例如,我们介绍了在普通XPS测量条件下,硅上二氧化硅薄膜的实际EAL的计算。对于Mg和AlKαx射线以及相对于表面法线小于约60°的光电子发射角,平均实际EAL比相应的IMFP小6.5%至9.4%。实际差异取决于X射线源,SiO_2厚度和XPS配置。对于更大的发射角,实际的EAL会随SiO_2厚度和发射角而有明显的变化。在这种情况下,应针对特定的测量条件确定实际的EAL。如果XPS用较小的X射线能量执行(即使用同步加速器辐射),则实际EAL可能比IMFP小约30%,并且对于最近的实验中发现的0°和55°发射角可能有所不同。

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