首页> 外文学位 >Characterization of the electronic and geometric structures of aluminas using X-ray photoelectron spectroscopy, Auger electron spectroscopy, electron energy loss spectroscopy, and low energy electron diffraction.
【24h】

Characterization of the electronic and geometric structures of aluminas using X-ray photoelectron spectroscopy, Auger electron spectroscopy, electron energy loss spectroscopy, and low energy electron diffraction.

机译:使用X射线光电子能谱,俄歇电子能谱,电子能量损失能谱和低能电子衍射来表征氧化铝的电子和几何结构。

获取原文
获取原文并翻译 | 示例

摘要

The electronic and geometric structures of aluminas have been studied with X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), electron energy loss spectroscopy (ELS), and low-energy electron diffraction (LEED). The first part of this work is a study of the charging and the binding energy reference problem for insulators in XPS. The effects of the low energy flood gun on the spectra are shown to depend on the thickness of the oxide. The discrepancy in the reported apparent binding energy of Al(2p) of aluminas, 74.5 eV for {dollar}gamma{dollar}-alumina powder and 76.3 eV for thin {dollar}gamma{dollar}-alumina film on Al, is accounted for by the difference in the reference level used and by the use of the same value for C(1s) of adventitious carbon on both metal and insulator surfaces.; The second part of this work is an XPS study of bulk aluminas. As the structure of alumina changes from {dollar}gamma{dollar}-alumina to {dollar}alpha{dollar}-alumina, the intensity at the center of the upper valence band decreases, while that at the bottom of both the upper valence band and the lower valence band increases. Hydroxyl groups in anodic alumina cause a 0.6 eV increase in the apparent binding energies of O(2s) and O(1s), and a diffuse shoulder on the high kinetic energy side of KL{dollar}sb{lcub}23{rcub}{dollar}L{dollar}sb{lcub}23{rcub}{dollar} as well as an 1.8 eV increase in the separation between KL{dollar}sb{lcub}23{rcub}{dollar}L{dollar}sb{lcub}23{rcub}{dollar} and KL{dollar}sb1{dollar}L{dollar}sb{lcub}23{rcub}{dollar} in O(KLL). The Al Auger parameter of {dollar}alpha{dollar}-alumina is 0.4 eV higher than that of {dollar}gamma{dollar}-alumina and 1.3 eV higher than that of anodic alumina.; The third part of the work is a study of the initial oxidation of the A1(111) surface at 450C and 5 x 410{dollar}sp{lcub}-7{rcub}{dollar} torr. A p(4 x 1) and a p(1 x 1) LEED pattern are observed at 50L. A (4{dollar}surd{dollar}3 x 4{dollar}surd{dollar}3)-R30 pattern, a subset of the p(1 x 1(, shows up at 100L. After 5KL exposure, only the p(1 x 1) and its subset remain. In the AES interatomic region at 50L the spectrum still looks closer to that of the clean surface; while at 75L it clearly shows the presence of the oxide.
机译:氧化铝的电子和几何结构已通过X射线光电子能谱(XPS),俄歇电子能谱(AES),电子能量损失能谱(ELS)和低能电子衍射(LEED)进行了研究。这项工作的第一部分是研究XPS中绝缘子的充电和结合能参考问题。显示了低能溢流枪对光谱的影响取决于氧化物的厚度。报道的氧化铝的Al(2p)的表观结合能的差异,是{美元}γ{美元}-氧化铝粉末的74.5 eV和在{美元}γ{美元}-氧化铝薄膜上的薄膜的76.3 eV的差异。根据所用参考水平的差异以及对金属和绝缘体表面上不定形碳的C(1s)使用相同的值;这项工作的第二部分是对散装氧化铝的XPS研究。随着氧化铝结构从{美元}γ{美元}-氧化铝变为{美元}α{美元}-氧化铝,在上价带中心的强度降低,而在两个上价带底部的强度降低。价带降低。阳极氧化铝中的羟基会导致O(2s)和O(1s)的表观结合能增加0.6 eV,并在KL {dollar} sb {lcub} 23 {rcub} {美元} L {dollar} sb {lcub} 23 {rcub} {dollar}以及KL {dollar} sb {lcub} 23 {rcub} {dollar} L {dollar} sb {lcub之间的距离增加了1.8 eV } O(KLL)中的} 23 {rcub} {dollar}和KL {dollar} sb1 {dollar} L {dollar} sb {lcub} 23 {rcub} {dollar}。 {美元}α{美元}-氧化铝的Al Auger参数比{美元}γ{美元}-氧化铝高0.4 eV,比阳极氧化铝高1.3 eV。研究的第三部分是研究在450℃和5 x 410 {dol} sp {lcub} -7 {rcub} {dollar}托时A1(111)表面的初始氧化。在50L处观察到p(4 x 1)和p(1 x 1)LEED模式。一个(4 {surd {dollar} 3 x 4 {dollar} surd {dollar} 3)-R30模式)的p(1 x 1()的子集显示为100L.5KL暴露后,仅p( 1 x 1)及其子集仍然存在,在AES原子间区域中,50L处的光谱看起来仍接近清洁表面的光谱;而在75L处,光谱清楚地表明存在氧化物。

著录项

  • 作者

    Kao, Chi-Chang.;

  • 作者单位

    Cornell University.;

  • 授予单位 Cornell University.;
  • 学科 Engineering Materials Science.
  • 学位 Ph.D.
  • 年度 1988
  • 页码 191 p.
  • 总页数 191
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料学;
  • 关键词

  • 入库时间 2022-08-17 11:50:49

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号