Characteristics Analysis of AlGaAs/GaAs Resonant Tunneling Diode (RTD) by Device Simulation

机译：AlGaAs / GaAs共振隧穿二极管（RTD）的特性仿真

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The device simulation of AlGaAs/GaAs RTD is performed by ATLAS, SILVACO software, and RTD Ⅰ-Ⅴ characteristics are obtained with different structure. The effects of quantum well width, doping concentration, barrier width and height on RTD Ⅰ-Ⅴ characteristics are analyzed in detail.

机译：利用ATLAS，SILVACO软件对AlGaAs / GaAs RTD进行了器件仿真，得到了不同结构的RTDⅠ-Ⅴ特性。详细分析了量子阱宽度，掺杂浓度，势垒宽度和高度对RTDⅠ-Ⅴ特性的影响。

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《International Symposium on Magnetic Industry(ISMI,04) amp; International Symposium on Physics and IT Industry(ISPITI'04); 20041004-08; Shenyang(CN)》|2004年|P.233-234|共2页
会议地点 Shenyang(CN)
作者
NIU Ping-juan; LIU Hong-wei; GUO Wei-lian; LI Xiao-yun;
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作者单位

School of Information and Communication Eng., Tianjin Polytechnic University, Tianjin, 300160, China;

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原文格式 PDF
正文语种 eng
中图分类磁性材料、铁氧体;计算技术、计算机技术;
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专利

1. Effect of bias step on the I-V curve in double-barrier AlGaAs/GaAs/AlGaAs resonant-tunnelling devices [J] . Dai ZH, Ni J Chinese physics letters . 2006,第4期

机译：偏压阶跃对双势垒AlGaAs / GaAs / AlGaAs谐振隧道器件中I-V曲线的影响
2. Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices [J] . DAI Zhen-Hong, NI Jun 中国物理快报：英文版 . 2006,第004期

机译：偏置步长对双势垒AlGaAs / GaAs / AlGaAs谐振管器件的I-V曲线的影响
3. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices [J] . Orsi Gordo V., Galvo Gobato Y., Galeti H. V. A., Journal of Electronic Materials . 2017,第7期

机译：InGaAs中载体的旋转极化在GaAs-Algaas谐振隧道装置中插入了自组装量子环
4. Characteristics Analysis of AlGaAs/GaAs Resonant Tunneling Diode (RTD) by Device Simulation [C] . NIU Ping-juan, LIU Hong-wei, GUO Wei-lian, International Symposium on Magnetic Industry . 2005

机译：通过设备仿真分析AlGaAs / GaAs谐振隧道二极管（RTD）的特征分析
5. Modeling and simulation of multipeak resonant tunneling diode (RTD) devices and RTD-based multivalued memories. [D] . Huang, Chih Yuan. 1996

机译：多峰谐振隧穿二极管（RTD）器件和基于RTD的多值存储器的建模和仿真。
6. GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications [O] . Jie Li, Hao Guo, Jun Liu, 2013

机译：Si上基于GaAs的谐振隧穿二极管（RTD）外延用于高度敏感的应变仪应用
7. Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices [O] . Gordo, V. Orsi, Gobato, Y.G., Galeti, H.V.A., 2017

机译：插入GaAs-AlGaAs共振隧穿器件中的InGaAs自组装量子环中载流子的自旋极化

Characteristics Analysis of AlGaAs/GaAs Resonant Tunneling Diode (RTD) by Device Simulation

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