Flexible Poly-Si TFTs Fabricated on PES Substrate using Sequential Lateral Solidification Crystallized Poly-Si Films

摘要

Using optimized sputtering condition of a-Si and SiO_2 thin film, we obtained the large grained poly-Si film on PES substrate. We successfully fabricated flexible poly-Si TFTs on PES with a gate dielectrics grown by plasma enhanced atomic layer deposition, a laser activation and an organic interlayer dielectric material.