NiSi_2 Ohmic Contact to n-Type 4H-SiC

摘要

We report the structural and electrical properties of NiSi2 contact to n-type 4H-SiC. NiSi_2 films are prepared by annealing the Ni and Si films separately deposited on (0001)-oriented 4H-SiC substrates with carrier concentrations (n) of 2X 10 and 2x10~(19) cm~(-3). The deposited films are annealed at 900℃ for 10 min in a flow Ar gas containing 5 vol.% H_2 gas. NiSi_2 contacts restrict the reaction between the contact and 4H-SiC substrate and NiSi2 contacts form the abrupt interface between the contact and 4H-SiC substrate. The specific contact resistances of NiSi_2 contact to n-type 4H-SiC with n = 2x 10~(18) and 2x10~(19) cm~(-3) are estimated to be 2.7 and 1.9x 10~(-6) Ωcm~2, respectively.