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Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

机译：基于镍的欧姆触点的形态学和电性能通过激光退火处理在N型4H-SiC上形成

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S. Rascunà; P. Badalà; C. Tringali; C. Bongiorno; E. Smecca; A. Alberti; S. Di Franco; F. Giannazzo; G. Greco; F. Roccaforte; M. Saggio;
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1. Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC [J] . Rascuna S., Badala P., Tringali C., Materials science in semiconductor processing . 2019,第期

机译：基于镍的欧姆触点的形态学和电性能通过激光退火工艺形成N型4H-SiC
2. Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods [J] . Ziwei Zhou, Weiwei He, Zhenzhong Zhang, 纳米技术与精密工程（英文） . 2021,第001期

机译：使用不同退火方法对N型4H-SiC的Ni基欧姆触点的特征
3. Formation of Ohmic Contacts to n-Type 4H-SiC at Low Annealing Temperatures [J] . Vinoth Kumar Sundaramoorthy, Renato Amaral Minamisawa, Lukas Kranz, Materials science forum . 2018,第期

机译：在低退火温度下与n型4H-SiC形成欧姆接触
4. Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiC [C] . Sang Youn Han, Nam-Kyun Kim, Eun-Dong Kim, International Conference on Silicon Carbide and Related Materials 2001 Pt.2 Oct 28-Nov 2, 2001 Tsukuba, Japan . 2001

机译：界面反应对n型4H-SiC Ni欧姆接触电性能的影响
5. Electrical, chemical, and structural characterization of the interface formed between nickel/gold and palladium/gold ohmic contacts and cleaned p-type gallium nitride (0001) surfaces. [D] . Hartlieb, Philip John. 2002

机译：镍/金和钯/金欧姆接触与清洁的p型氮化镓（0001）表面之间形成的界面的电，化学和结构表征。
6. Effects of Interfacial Passivation on the Electrical Performance Stability and Contact Properties of Solution Process Based ZnO Thin Film Transistors [O] . Liaojun Wan, Fuchao He, Yu Qin, 2018

机译：界面钝化对固溶处理ZnO薄膜晶体管的电性能稳定性和接触性能的影响
7. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：P型Al植入的4H-SIC层上的欧姆接触后的植入后退火
8. Ohmic Contacts to n-Type GaAs Using High-Temperature Rapid Thermal Annealing for Self-Aligned Processing [R] . Chen, C. L., Mahoney, L. J., Woodhouse, J. D., 1987

机译：采用高温快速热退火进行自对准加工的n型Gaas欧姆接触

Morphological and electrical properties of Nickel based Ohmic contacts formed by laser annealing process on n-type 4H-SiC

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