Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes

摘要

Microstructure of stacking faults formed in the high voltage 4H- and 6H-SiC p-n~- diodes under forward bias has been investigated using conventional and high-resolution transmission electron microscopy (TEM). All the observed stacking faults were isolated single-layer Shockley type bound by partial dislocations with Burgers vector of a/3.