GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates

摘要

A hydride - metal organic vapor phase epitaxy (H-MOVPE) system was developed that has the ability to alternate between MOCVD and HVPE in the same reactor. This technique was used to fabricate freestanding GaN substrates by depositing thick GaN on closely lattice-matched LiGaO2 (LGO) and LiAlO2 (LAO) wafers. Additionally, this deposition system was used to deposit single-crystal GaN on Si (111) by a two-stage process with a low-temperature MOCVD step followed by a low-temperature HVPE step. The surface morphology was studied by AFM and SEM, while the structural quality was analyzed by XRD and TEM. The chemical composition was investigated by AES, ESCA and SIMS.