Single crystal GaN substrate grown by hydride-metal organic vapor phase epitaxy (H-Movpe)

摘要

We report on successful growth of single-crystal GaN substrates by combining the LiGaO_2 substrates. The key to obtaining high quality GaN films on LiGaO_2 was the initial surface nitridation step. A self-separating technique was developed that leaves free-standing flat single crystal GaN without mechanical or chemical treatment. It was determined that surface nitridation and cooling process are critical in film-substrate self-separation.