State Key Lab. of Tribology, Tsinghua Univ., Beijing, China;
atomic force microscopy; chemical mechanical polishing; sapphire; semiconductor technology; silicon compounds; wide band gap semiconductors; AFM; CMP technology; SiC; atomic force microscopy; chemical mechanical polishing; hexagonal crystalline wafer; sapphire wafers; ultrasmooth surface atomic step morphology; ultrasmooth wafer surface; Abrasives; Atomic layer deposition; Chemicals; Morphology; Silicon carbide; Surface morphology;
机译:超光滑表面原子台阶形态对蓝宝石和SiC晶片化学机械抛光(CMP)性能的影响
机译:掺Nd3 +的胶体SiO2复合磨料:蓝宝石晶片的合成及其对化学机械抛光(CMP)性能的影响
机译:轴向Si面6H-SiC晶片的化学机械抛光(CMP),以获得原子平坦的无缺陷表面
机译:瞬时退火对房间温度脉冲激光沉积NiO(111)外延薄膜在原子阶梯式蓝宝石(0001)衬底上的纳米级表面形态的影响
机译:铁电畴壁,自由表面和台阶的原子结构。
机译:超精密加工中蓝宝石表面的原子台阶形成
机译:晶圆边缘轮廓对STI-CMP工艺性能的影响:基于FEM分析计算的晶片表面压力(机器元件,设计和制造)