There are silicon carbide - (sic) - etching agent is described, with the general formula mxo2, wherein m is an alkali metal, x is a halogen and o is oxygen. If it with a grinding agent powder in the form of an aqueous slurry is mixed, this acts mxo2-Etching agent as a triboelectric chemical reagent, through the sic - material removal rate lies in the chemical mechanical polishing (cmp) is increased. The material removal rates, in this case, can sometimes in comparison to the slurry without halite - etchant rise by several orders of magnitude. Typical metals in the formula mxo2 are k (potassium) and na (sodium), x comprises cl (chlorine), br (bromine) and i (iodine). All the rows of mxo2-Compounds belong to the chemical family of metallhalite or ammoniumhalite. Sodium chlorite, naclo2, the simplest and most available member of the halite - family, is a typical example. The increased polishing rate can be used, for example, the throughput of cmp in the polishing of sic - substrates, to significantly increase. The polishing waste water from the cmp - process can be due to the absence of toxic heavy metal - ions in the polishing formulations with ease in the waste water - processing plants are treated.
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