首页> 外文会议>International Conference on Micro amp; Nano Systems 2002 (ICMNS 2002) Aug 11-14, 2002 Kunming, China >Chemical Mechanical Polishing of Computer Hard Disk Substrate in Colloidal SiO_2 Slurry
【24h】

Chemical Mechanical Polishing of Computer Hard Disk Substrate in Colloidal SiO_2 Slurry

机译:SiO_2胶体浆料中计算机硬盘基板的化学机械抛光

获取原文
获取原文并翻译 | 示例

摘要

With magnetic heads operating closer to the disks, the hard disks are forced to be ultra-smooth. At present, chemical-mechanical polishing (CMP) has become a widely accepted technology for global planarization. Chemical-mechanical polishing of hard disk substrate with nickel-phosphorous plated in colloidal SiO_2 slurry has been studied in the paper. Chapman MP2000~+ surface profiler shows that the average roughness (Ra) and waviness (Wa) of the surface are reduced to 0.55 A and 0.90 A respectively, those are the lowest values reported to date for hard disk polishing. Atom force microscopy (AFM) shows that a very smooth finishing surface has been obtained.
机译:随着磁头在磁盘附近运行,硬盘被迫变得非常光滑。当前,化学机械抛光(CMP)已经成为全球平面化的广泛接受的技术。本文研究了在胶体SiO_2浆料中镀镍磷对硬盘基板的化学机械抛光。 Chapman MP2000〜+表面轮廓仪显示,表面的平均粗糙度(Ra)和波纹度(Wa)分别降低到0.55 A和0.90 A,这是迄今为止硬盘抛光的最低值。原子力显微镜(AFM)显示已获得非常光滑的表面。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号