ELECTRICAL DETECTION AND SIMULATION OF STRESS IN SILICON NITRIDE SPACER TECHNOLOGY

摘要

The intrinsic and thermal stress of deposited silicon dioxide and silicon nitride is measured. These measured values are used in a finite element process simulator to calculate the pressure in the silicon around the emitter window during processing. Bipolar transistors are fabricated with different combinations of silicon oxide and silicon nitride and the yield of large transistor arrays is compared with the calculated pressure for the different combinations. The presence of a tensile pressure near the emitter coincides with a low measured device yield.