SEMI-INSULATING GalnP:Fe AND GaAs:Fe REGROWTH AROUND GaAs/AlGaAs LASER MESAS

摘要

Selective regrowth of semi-insulating Iron-doped Ga_(0.51)In_(0.49)P (Sl-GalnP:Fe) and Sl-GaAs:Fe around GaAs/AIGaAs mesas by Hydride Vapor Phase Epitaxy (HVPE) has been achieved. A HCI based in-situ cleaning procedure has been used to remove aluminium oxide from the etched walls of the mesas. Regrowth conducted without proper cleaning results in irregular interface with voids. Our cleaning and regrowth methods have been used for fabricating GaAs/AlGaAs buried heterostructure in-plane lasers and vertical-cavity surface-emitting lasers.