Effects of Substrate Terminal on the Dynamic Resistance and the Midpoint Potential of High Voltage Cascode GaN HEMTs

摘要

In this paper, the performance of high voltage Cascode Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) in two different package types are compared. The only difference between the two package structures is the potential of the substrate terminal of the GaN HEMT which affects the dynamic on-resistance (Ron) and the stability of the midpoint potential of the Cascode GaN HEMT.