Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
Microelectronics Center, Harbin Institute of Technology, Harbin 150001, China;
Random access memory; Three-dimensional displays; Through-silicon vias; Ions; Solid modeling; Transistors; Aluminum;
机译:用于三维堆叠集成电路(3D-SIC)架构的铜硅通孔(TSV)的工艺评估和附着力评估
机译:优化创新方法以缩短3D集成硅通孔(TSV)中的填充时间
机译:铜可塑性对3D集成电路的硅通孔(TSV)中硅中应力诱导的影响
机译:通过硅通孔(TSV)的3D集成静态随机存取存储器的敏感性评估
机译:三维(3D)集成中的直通孔(TSV)的电气评估和建模。
机译:整体式3D逻辑电路和静态随机存取存储器的电耦合和仿真
机译:3D硅直通孔(TSV)对通孔挤出的处理效果互连:两种TSV结构的比较研究