CONFIGURABLE RANDOM-ACCESS MEMORY (RAM) ARRAY INCLUDING THROUGH-SILICON VIA (TSV) BYPASSING PHYSICAL LAYER

摘要

A system comprising a main logic circuit comprising a memory controller comprising a signal control circuit and a through-silicon via (TSV) connection point electrically coupled to the signal control circuit, and a memory device comprising a memory unit comprising a TSV electrically coupled to the TSV connection point of the main logic circuit, wherein the signal control circuit is to transmit a signal using the TSV to operate the memory device.