OPTICAL MEASUREMENT OF MINIBAND DISPERSION AND BANDGAP RENORMALIZATION IN MODULATION-DOPED AlGaAs/GaAs SUPERLATTICES

摘要

Doped superlattices of GaAs/Al_(0.21)Ga_(0.79)As composition, with a carrier concentration of n = 1.4 x 10~(12) cm~(-2) and n = 1.7 x 10~(12) cm~(-2) per superlattice period, where studied by photoluminescence in high magnetic fields. The photoluminescence intensity at fixed photon energies showed weak oscillations. From the oscillatory photoluminescence the superlattice miniband energy width and the renormalized bandgap were deduced.