Bandgap renormalization: GaAs/AlGaAs quantum wells

摘要

Bandgap energy renormalization by many-body interactions has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4K and for magnetic fields up to 30T. The 2D- carrier densities varied between 1 and 12 x 10(11) cm(-2). At the maximum 2D-carrier density, the bandgap energy difference between the doped and undoped samples was about 34 meV.