Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

摘要

Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4K. The 2D-carrier densities varied between 1 and 12 x 10 to the 11th power/sq cm. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.