首页> 外文会议>International Conference on High Magnetic Fields in Semiconductor Physics; 20040802-06; Tallahassee,FL(US) >DISORDER INDUCED COHERENCE-INCOHERENCE CROSSOVER IN RANDOM GaAs/AlGaAs SUPERLATTICES
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DISORDER INDUCED COHERENCE-INCOHERENCE CROSSOVER IN RANDOM GaAs/AlGaAs SUPERLATTICES

机译:随机GaAs / AlGaAs超晶格中疾病引起的相干非相干交叉

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The coherence of electrons was studied in intentionally disordered GaAs/AlGaAs su-perlattices as a function of the vertical interlayer coupling. Depending on the relation of the disorder energy and the Fermi energy the coherent and incoherent diffusive transport regimes were distinguished. New features of weakly coupled layered electron systems such as the vertical coupling energy and the in-plane phase-breaking time were observed by magnetoresistance measurements in the coherent and incoherent regimes respectively. Both of them were found to decrease with increasing disorder strength. This demonstrates the disorder induced break-down of the interlayer coherence of quasi-particles which drastically affected their intralayer coherence.
机译:研究了在有序无序的GaAs / AlGaAs超晶格中电子的相干性与垂直层间耦合的关系。根据无序能量和费米能量的关系,区分了相干和不相干的扩散传输方式。分别通过相干态和非相干态的磁阻测量,观察到了弱耦合层状电子系统的新特征,例如垂直耦合能和面内断相时间。发现它们都随着紊乱强度的增加而降低。这证明了无序诱导的准粒子的层间相干性破坏,极大地影响了它们的层内相干性。

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